Wafer processing method
AssigneeDisco Corporation
InventorsTadato Nagasawa, Yusuke Nagai
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Abstract
A method of processing a wafer having devices in a plurality of areas sectioned by streets arranged in a lattice pattern on the front surface to form a metal film on a back surface thereof, wherein a laser beam application step for applying a laser beam capable of passing through a wafer, along the streets formed on the wafer to form a deteriorated layer is carried out before a metal film forming step for forming a metal film on the back surface of the wafer.
Claims8
A method of processing a wafer having devices in a plurality of areas sectioned by streets arranged in a lattice pattern on the front surface to form a metal film on a back surface thereof, wherein
- a laser beam application step for applying a laser beam capable of passing through a wafer, along the streets formed on the wafer to form a deteriorated layer is carried out before a metal film forming step for forming a metal film on the back surface of the wafer.
A method of processing a wafer having devices in a plurality of areas sectioned by streets arranged in a lattice pattern on the front surface, comprising
- a laser beam application step for applying a laser beam capable of passing through a wafer, along the streets formed on the wafer to form a deteriorated layer;
- a back surface grinding step for grinding the back surface of the wafer having the deteriorated layer formed along the streets to a predetermined thickness;
- and
- a metal film forming step for forming a metal film on the back surface of the wafer.
A method of processing a wafer having devices formed in a plurality of areas sectioned by streets arranged in a lattice pattern on the front surface, comprising
- a back surface grinding step for grinding the back surface of the wafer to a predetermined thickness in a state of a protective member being bonded to the front surface of the wafer;
- a laser beam application step for applying a laser beam capable of passing through a wafer, along the streets formed on the wafer to form a deteriorated layer;
- and
- a metal film forming step for forming a metal film on the back surface of the wafer.
Dependencies are inferred from the claim text.