MEMS device and interposer and method for integrating MEMS device and interposer

A method for manufacturing a Microelectromechanical Systems (MEMS) assembly, said method comprising:

• obtaining an SOI wafer, which comprises:
• (i) a handle layer,
• (ii) a dielectric layer on said handle layer, and
• (iii) a device layer on said dielectric layer;
• etching said device layer of said SOI wafer to partially define said MEMS device;
• obtaining an interposer wafer;
• bonding said SOI wafer to said interposer wafer in a way such that said device layer of said SOI wafer faces said interposer wafer;
• removing said handle layer of said SOI wafer;
• removing said dielectric layer of the SOI wafer;
• and
• etching said device layer of said SOI wafer to further define said MEMS device.

A method of manufacturing a Microelectromechanical Systems (MEMS) assembly, said method comprising:

• obtaining a first SOI wafer, wherein said first SOI wafer comprises:
• (i) a handle layer,
• (ii) a dielectric layer on said handle layer, and
• (iii) a device layer on said dielectric layer;
• etching said device layer and said dielectric layer to define separate areas on said first SOI wafer;
• obtaining a second SOI wafer, which comprises:
• (i) a handle layer,
• (ii) a dielectric layer on said handle layer, and
• (iii) a device layer on said dielectric layer;
• etching said device layer of said second SOI wafer to at least partially define said MEMS device;
• bonding said device layer of said second SOI wafer to said device layer of said first SOI wafer;
• removing said handle layer of said second SOI wafer;
• and
• removing said dielectric layer of said second SOI wafer.

A Microelectromechanical Systems (MEMS) apparatus comprising:

• an interposer wafer comprising an SOI wafer, wherein said SOI wafer comprises:
• (i) a handle layer,
• (ii) a dielectric layer on said handle layer, and
• (iii) a device layer on said dielectric layer;
• a MEMS device comprising posts extending from a silicon plate, wherein said MEMS device is directly mounted to said interposer by bonding said posts of said MEMS device to said device layer of said interposer.

A method of manufacturing a Microelectromechanical Systems (MEMS) assembly, said method comprising:

• obtaining a first SOI wafer, wherein said first SOI wafer comprises:
• (i) a handle layer,
• (ii) a dielectric layer on said handle layer, and
• (iii) a device layer on said dielectric layer;
• performing a mesa etch on said device layer to define at least one structural post;
• obtaining a second SOI wafer, which comprises:
• (i) a handle layer,
• (ii) a dielectric layer on said handle layer, and
• (iii) a device layer on said dielectric layer;
• bonding said device layer of said second SOI wafer to said at least one structural post of said first SOI wafer;
• removing said handle layer of said second SOI wafer;
• and
• removing said dielectric layer of said second SOI wafer.

A method for manufacturing Microelectromechanical Systems (MEMS) devices, said method comprising:

• obtaining an SOI wafer, which comprises:
• (i) a handle layer,
• (ii) a dielectric layer on said handle layer, and
• (iii) a device layer on said dielectric layer;
• etching said device layer of said SOI wafer to define an array of sets of structural posts, wherein each set of structural post includes at least one structure post;
• obtaining an interposer wafer;
• bonding said SOI wafer to said interposer wafer in a way such that said device layer of said SOI wafer faces said interposer wafer;
• removing said handle layer of said SOI wafer;
• removing said dielectric layer of the SOI wafer;
• etching said device layer of said SOI wafer to define an array of said MEMS devices;
• and
• separating the result structure into individual MEMS devices.

A method of manufacturing Microelectromechanical Systems (MEMS) devices, said method comprising:

• obtaining a first SOI wafer, wherein said first SOI wafer comprises:
• (i) a handle layer,
• (ii) a dielectric layer on said handle layer, and
• (iii) a device layer on said dielectric layer;
• performing a mesa etch on said device layer to define an array of sets of structural posts, wherein each set of structural post includes at least one structural post;
• obtaining a second SOI wafer, which comprises:
• (i) a handle layer,
• (ii) a dielectric layer on said handle layer, and
• (iii) a device layer on said dielectric layer;
• bonding said device layer of said second SOI wafer to said at least one structural post of said first SOI wafer;
• removing said handle layer of said second SOI wafer;
• removing said dielectric layer of said second SOI wafer;
• etching said device layer of said second SOI wafer to define an array of said MEMS devices;
• and
• separating the result structure into individual MEMS devices.