Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element
AssigneeKabushiki Kaisha Toshiba
InventorsHaruhiko Okazaki, Hideto Sugawara
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AssigneeKabushiki Kaisha Toshiba
InventorsHaruhiko Okazaki, Hideto Sugawara
Estimating the term…
An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle over (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle over (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle over (3)} an Al layer as a high-reflection electrode, {circle over (4)} a Ti layer having a barrier function, and {circle over (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.
1-40. (canceled)
A manufacturing method of a light emitting element, comprising the steps of:
Dependencies are inferred from the claim text.