Optimized monitor method for a metal patterning process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsien-Tsong Chen, Ming-Shuo Yen, Woan Hwang, Yu-Chang Chen, Tien-Tzu Wen, Shion-Feng Chien
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Abstract
A method of early and effective detection of defects in a metal patterning process is described. A test keys structure is provided comprising a plurality of test keys in scribe lines of a control monitor wafer wherein more than 300 test keys are formed on a control monitor wafer and wherein each of the plurality of test keys has an area of at least 106 μm2. A metal layer is deposited on the control monitor wafer. A dielectric layer is deposited overlying the metal layer. Thereafter, the control monitor wafer is tested using the plurality of test keys.
Claims11
1-20. (Canceled).
A test keys structure comprising:
- a plurality of test keys in scribe lines of a control monitor wafer wherein between 50 and 400 test keys are formed on said control monitor wafer and wherein each of said plurality of test keys has an area of at least 1E6 μm2.
A test keys structure comprising:
- a plurality of test keys in scribe lines of a control monitor wafer wherein between 50 and 400 test keys are formed on said control monitor wafer and wherein each of said plurality of test keys has an area of at least 1E6 μm2;
- metal lines on said control monitor wafer;
- a dielectric layer overlying said metal lines;
- and
- an opening through said dielectric layer to one of said metal lines wherein said control monitor wafer is tested using said plurality of test keys.
Dependencies are inferred from the claim text.