Method for manufacturing a semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJu-Jin An, Soo-Woong Lee
Life of this patent
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Abstract
A method of forming patterns in a semiconductor device comprises: forming a conductive film on a substrate; forming an anti-reflective layer on the conductive film; cleaning oxide residues on the anti-reflective layer using a first cleaning solution; cleaning the oxide residues on the anti-reflective layer using a second cleaning solution; forming a photoresist pattern on the anti-reflective layer; and patterning the conductive film using the photoresist pattern.
Claims27
A method of forming patterns in a semiconductor device comprising:
- forming a conductive film on a substrate;
- forming an anti-reflective layer on the conductive film;
- cleaning oxide residues on the anti-reflective layer using a first cleaning solution;
- cleaning the oxide residues on the anti-reflective layer using a second cleaning solution;
- forming a photoresist pattern on the anti-reflective layer;
- and
- patterning the conductive film using the photoresist pattern.
A method of forming patterns in a semiconductor device comprising:
- forming an insulation film on a substrate;
- forming a conductive film on the insulation film;
- forming a hard mask layer on the conductive film;
- cleaning oxide residues on the hard mask layer using a first cleaning solution;
- cleaning the oxide residues on the hard mask layer using a second cleaning solution;
- forming a photoresist pattern on the hard mask layer;
- forming a hard mask by patterning the hard mask layer using the photoresist pattern;
- and
- patterning the conductive film using the hard mask.
A method of manufacturing a non-volatile memory device comprising:
- forming a tunnel oxide film on a semiconductor substrate;
- forming a first conductive film on the tunnel oxide film, the first conductive film being a floating gate of the non-volatile memory device;
- forming an oxide/nitride/oxide film on the first conductive film;
- forming a second conductive film on the oxide/nitride/oxide film, the second conductive film being a control gate of the non-volatile memory device;
- forming a metal silicide layer on the second conductive film;
- forming a hard mask layer on the metal silicide layer;
- cleaning oxide residues on the hard mask layer using a first cleaning solution;
- cleaning the oxide residues on the hard mask layer using a second cleaning solution;
- forming a photoresist pattern on the hard mask layer;
- forming a hard mask by patterning the hard mask layer using the photoresist pattern;
- and
- patterning the metal silicide layer, the second conductive film, and the oxide/nitride/oxide film and the first conductive film using the hard mask.
A method of manufacturing a volatile memory device comprising:
- forming a transistor structure and a pad on a semiconductor substrate;
- forming an insulation film on the transistor structure and the pad;
- forming an anti-reflective layer on the insulation film;
- cleaning oxide residues on the anti-reflective layer using a first cleaning solution;
- cleaning the oxide residues on the anti-reflective layer using a second cleaning solution;
- forming a photoresist pattern on the anti-reflection film;
- forming a contact hole exposing the pad by etching the anti-reflective layer and the insulation film using the photoresist pattern;
- and
- forming a contact plug electrically connected to the pad in the contact hole.
Dependencies are inferred from the claim text.