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US 2005/0032307 A1Published application
Damascene phase change memory
AssigneeIntel Corporation
InventorIlya Karpov
Life of this patent
Estimating the term…
Abstract
A phase change material may include a pore formed of a relatively smaller phase change material and a relatively larger resistance heater. As a result, the relatively smaller portion of phase change material may have improved properties.
Claims23
1-10. (Canceled).
A memory comprising:
- an insulator over a substrate, said insulator including a pore having an electrode over the substrate and a phase change material over the electrode, wherein the phase change material fills less of the pore than the electrode.
A system comprising:
- a processor-based device;
- a wireless interface coupled to said processor-based device;
- and
- a semiconductor memory coupled to said device, said memory including an insulator over a substrate, said insulator including a pore having an electrode over the substrate and a phase change material over the electrode wherein the phase change material fills less of the pore than the electrode.
1 more element
A memory comprising:
- an insulator over a substrate, said insulator including a pore having an electrode over the substrate and a phase change material over the electrode, wherein the phase change material is less than 25 percent of the height of the pore.
An apparatus comprising:
- a damascene structure, wherein the damascene structure includes a first electrode over a substrate and a phase change material over the first electrode;
- and
- a second electrode over the damascene structure.
Dependencies are inferred from the claim text.