Method of manufacturing a semiconductor device
AssigneeEblana Photonics Limited
InventorJames O'Gorman
Life of this patent
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Abstract
This invention generally relates to semiconductor devices, for example lasers and more particularly to single frequency lasers and is directed at overcoming problems associated with the manufacture of these devices. In particular, a laser device is provided formed on a substrate having a plurality of layers (1,2,3,4,5), the laser device comprising at least one waveguide (for example a ridge) established by the selective removal of sections of at least one of the layers. Wherein alignment features are provided on the device to facilitate subsequent placement.
Claims31
A method of manufacturing a semiconductor device from a semiconductor body comprising the steps of:
- forming a first layer of masking material on a surface of the semiconductor body, wherein the layer of masking material provides at least one topographical outline, the outline of a cleave marking region and the outline of at least one alignment or registration feature distinct from said topographical outline, performing one or more processes to form at least one topographical feature from the at least one topographical outline, a cleave marking notch from the cleave marking region and at least one alignment or registration feature from the at least one outline of the at least one alignment or registration feature, forming the outline of a second cleave marking region in a second layer of masking material on the surface of the semiconductor body, where the second cleave marking region overlaps the notch formed in the cleave marking region, performing an etching using a crystallographic etch to form a cleave marking feature, such that the at least one topographical feature, cleave marking feature and the at least one alignment or registration feature are aligned with respect to one another.
A method of manufacturing a semiconductor device from a semiconductor body comprising the steps of:
- forming a first layer of masking material on a surface of the semiconductor body, wherein the layer of masking material provides at least one topographical outline, the outline of a cleave marking region, performing one or more processes to form at least one topographical feature from the at least one topographical outline, a cleave marking notch from the cleave marking region, forming the outline of a second cleave marking region in a second layer of masking material on the surface of the semiconductor body, where the second cleave marking region overlaps the notch formed in the cleave marking region, performing an etching using a crystallographic etch to form a cleave marking feature, singulating, cleaving or separating the device using the cleave marking feature, placing the device on a second device or surface having a pattern of alignment or registration features formed thereon, and whereon the pattern formed by the material correspond to the outline of the at least one topographical feature of the semiconductor device and where a layer of joining material is selectively pre-placed on the alignment or registration features of either the semiconductor device or the second device or surface, such that forces in the joining material cause at least one topographical features of the semiconductor device and the second device or surface to mutually align.
Dependencies are inferred from the claim text.