Capacitor element, semiconductor integrated circuit and method of manufacturing those

A semiconductor integrated circuit comprising:

• a first power supply interconnection layer formed of a first metal layer, and supplied with a first power supply voltage;
• a dielectric layer formed on the first power supply interconnection layer;
• and
• a second power supply interconnection layer formed on the dielectric layer, formed of a second metal layer provided with several convex portions at a surface facing the first power supply interconnection layer, and supplied with a second power supply voltage,
• a capacitor element including the first metal layer, the dielectric layer and the second metal layer being formed between the first and second power supply interconnection layers.

A semiconductor integrated circuit comprising:

• a first metal layer connected to a reference voltage;
• a dielectric layer formed on the first metal layer;
• and
• a pad electrode formed on the dielectric layer, and formed of a second metal layer provided with several convex portions at a surface facing the first metal layer.

A method of manufacturing a semiconductor integrated circuit, comprising:

• forming a first metal layer on a semiconductor layer;
• depositing a dielectric layer on the first metal layer;
• forming an etching mask material having a predetermined opening pattern on the dielectric layer;
• etching the dielectric layer using the mask material, the dielectric layer being formed with several concave portions having a depth, which does not reach the surface of the first metal layer;
• and
• depositing metal on the dielectric layer after removed the mask material, planarizing the metal, and forming a second metal layer provided with several convex portions at a surface facing the first metal layer.