Metal trim mirror for optimized thin film resistor laser trimming

The method of claim 34, wherein forming said MIM capacitor comprises:

• forming a first capacitor plate;
• forming a second capacitor plate;
• and
• forming an insulating layer between said first and second capacitor plates.

A device comprising:

• a refractory metal reflector;
• the refractory metal comprising tungsten (W), molybdenum (Mo), tantalum (Ta), Rhenium (Re), and/or Niobium (Nb),
• a first dielectric layer disposed over the reflector;
• and
• a thin film resistor formed over the first dielectric layer.

A device comprising:

• a reflector;
• a first dielectric layer disposed over the reflector;
• a thin film resistor formed over the first dielectric layer, and
• a metal-insulator-metal (MIM) capacitor.

A method comprising:

• forming a reflector comprising:
• forming a reflective layer;
• forming a mask layer over said reflective layer,
• patterning and developing said mask layer to form a mask;
• and
• etching said reflective layer except a portion underlying said mask, wherein said
• portion of said reflective layer comprises said reflector,
• forming a first dielectric layer over said reflector;
• and
• forming a thin film resistor over said first dielectric layer.

A method comprising:

• forming a reflector;
• forming a first dielectric layer over said reflector;
• and
• forming a thin film resistor over said first dielectric layer comprising
• forming a thin film resistive layer over said first dielectric layer;
• forming a mask layer over said thin film resistive layer;
• patterning and developing said mask layer to form a mask;
• and
• etching said thin film resistive layer except a portion under said mask, wherein
• said portion comprises said thin film resistor.

A method comprising:

• forming a reflector;
• forming a first dielectric layer over said reflector;
• forming a thin film resistor over said first dielectric layer, and
• forming a metal-insulator-metal (MIM) capacitor.