Top-emission active matrix electroluminescence device and method for fabricating the same
AssigneeLG Electronics Inc.
InventorHong Kim
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Abstract
A top-emission active matrix electroluminescence device and a method for fabricating the same are disclosed, wherein a counter common electrode is formed in an area outside of a pixel area, when forming a pixel electrode, so as to simultaneously enhance an emission efficiency and an electrical function of the device. Herein, the counter common electrode is electrically connected to a common electrode, thereby preventing an overload and a short-circuit of the common electrode, even though the common electrode is formed in a thin layer.
Claims22
An active matrix electroluminescence device, comprising:
- a substrate including a thin film transistor and a pixel area defined thereon;
- an insulating layer formed on the substrate and the thin film transistor;
- a first electrode formed on the insulating layer of the pixel area;
- a second electrode formed on the insulating layer between the first electrodes;
- an emission layer formed on each of the first electrodes;
- and
- a third electrode formed on the emission layer and electrically connected to the second electrode.
A method for fabricating an active matrix electroluminescence device, comprising:
- forming a thin film transistor on a substrate having a pixel area defined thereon;
- forming an insulating layer on the thin film transistor and the substrate;
- forming a first electrode on the insulating layer of the pixel area and a second electrode on the insulating layer between the first electrodes;
- forming an emission layer on the first electrodes;
- and
- forming a third electrode on the emission layer, the third electrode being electrically connected to the second electrode.
Dependencies are inferred from the claim text.