[under bump metallurgic layer]
AssigneeAdvanced Semiconductor Engineering, Inc.
InventorMin-Lung Huang
Life of this patent
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Abstract
An under bump metallurgic (UBM) layer which is adapted for a chip is disclosed. The UMM layer alleviate the loss of electromigration resulting from current crowing effect at the corner of UBM layer near the transmission line. By increasing the thickness of the UBM layer at the particular region which is close to the transmission line, losses of the UBM layer due to electromigration can be compensated. The life time of the chip is, therefore, enhanced.
Claims11
An under bump metallurgic (UBM) layer adapted for a chip, the chip comprising a bonding pad and a transmission line coupled thereto, wherein the UBM layer is formed over the bonding pad, wherein a portion of the UBM layer which is close to the transmission line is thicker than a portion of the UBM layer which is away from the transmission line.
A conductive structure over a bonding pad, adapted for a chip, the chip comprising a bonding pad and a transmission line coupled thereto, the conductive structure comprising:
- an under bump metallurgical (UBM) layer formed over the bonding pad, a portion of the UBM layer which is close to the transmission line is thicker than a portion of the UBM layer which is away from the transmission line;
- and
- a conductive bump, wherein a bottom of the conductive bump is connected to the UBM layer.
Dependencies are inferred from the claim text.