Barrier-less integration with copper alloy

A copper interconnect, comprising:

• a substrate, the substrate comprising semiconductors in or over the substrate, the substrate further comprising at least one contact point of first level copper;
• at least one interconnect opening through layers of semiconductor material over the substrate aligned with the at least one contact point;
• sidewalls of the at least one interconnect opening lined with an annealed compound layer, comprising:
• (i) a layer of metal barrier material
• (ii) a layer of metal barrier material oxide created over the surface there-of;
• (ii) a layer of doped copper;
• and
• (iii) a layer of pure copper;
• and
• the at least one interconnect opening filled with copper.