Method of manufacturing electronic device and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device including a step of forming a layered structure, comprising the steps of:

• forming a semiconductor layer on a base;
• forming a gate insulating layer on the semiconductor layer;
• forming a gate electrode having a predetermined pattern on the gate insulating layer;
• forming an interlayer insulating layer mainly made of silicon oxynitride and having a nitrogen concentration of 2 atomic percent or higher on the gate electrode;
• and
• forming a conductive layer on the interlayer insulating layer.

A semiconductor device comprising:

• a semiconductor layer formed on a base;
• a gate insulting layer formed on the semiconductor layer;
• a gate electrode formed on the gate insulating layer;
• an interlayer insulating layer formed on the gate electrode;
• and
• a conductive layer formed on the interlayer insulating layer,
• at least the interlayer insulating layer at the side of the gate electrode being mainly made of silicon oxynitride with a nitrogen concentration of 2 atomic percent or higher.