US 2005/0029581 A1 · Field-effect-controllable semiconductor component and method for producing the semiconductor component

Abstract

A semiconductor component has at least one first terminal zone of a first conductivity type in a semiconductor body. The first terminal zone is contact-connected by a first terminal electrode. A drift zone of the first conductivity type is adjoined by a second terminal zone of the second conductivity type. A channel zone of a second conductivity type is formed between the at least one first terminal zone and the drift zone. A control electrode is insulated from the semiconductor body and adjacent to the channel zone. A first channel is formed by the channel zone in a region adjacent to the control electrode, the first channel conducts only upon application of a control voltage that is not equal to zero between the control electrode and the first terminal zone. The first terminal electrode is connected to the drift zone via at least one second channel of the first conductivity type, which already conducts in the event of a control voltage equal to zero.

Claims18

Dependent claims

A semiconductor component, comprising:

at least one first terminal zone of a first conductivity type formed in a semiconductor body, and a first terminal electrode contact-connected to said first terminal zone;
a drift zone of the first conductivity type, and a second terminal zone of a second conductivity type adjoining said drift zone;
a channel zone of the second conductivity type disposed between said at least one first terminal zone and said drift zone, and a control electrode insulated from said semiconductor body and adjacent said channel zone;
said channel zone having a first channel in a region adjacent said control electrode, and said first channel conducting only upon application of a non-zero control voltage between said control electrode and said first terminal zone;
and
at least one second channel of the first conductivity type connecting said first terminal electrode to said drift zone, said at least one second channel already conducting when the control voltage equals zero.

3 more elements

A method of producing a semiconductor component, which comprises the following method steps:

providing an assembly having a semiconductor body, formed with a drift zone of a first conductivity type and a channel zone of a second conductivity type disposed in the drift zone at a front side of the semiconductor body, the assembly further having a control electrode insulated from the semiconductor body and disposed above the front side of the semiconductor body;
producing of a cutout in the control electrode, above the channel zone, and extending to above the drift zone in the lateral direction;
doping the channel zone below edges of the control electrode in a region of the cutout with dopants of the first conductivity type, to form a channel of the first conductivity type;
producing a first terminal zone of the first conductivity type in the channel zone, the terminal zone adjoining the channel of the first conductivity type in the component.

1 more element

Dependencies are inferred from the claim text.

Field-effect-controllable semiconductor component and method for producing the semiconductor component

Life of this patent

Field-effect-controllable semiconductor component and method for producing the semiconductor component

Life of this patent

Abstract

Claims18