LED fabrication via ion implant isolation

A semiconductor light emitting diode comprising:

• a semiconductor substrate;
• a buffer layer on said substrate;
• a semiconductor active structure on said buffer layer for providing an optical emission when current is injected therethrough;
• a p-type epitaxial layer of a Group III nitride on said active structure;
• a highly resistive gallium nitride border on said active structure and surrounding said p-type layer for electrically isolating portions of said active structure;
• and
• respective ohmic contacts to said diode for injecting current through said diode and said active structure and generating a desired emission therefrom.

A method of manufacturing a light emitting diode comprising:

• forming a first epitaxial region having a first conductivity type on a substrate;
• forming a second epitaxial region having a second conductivity type on the first epitaxial region, the first and second epitaxial regions forming a p-n junction;
• forming a metal contact layer on a top surface of the second epitaxial region, the metal contact layer patterned to reveal portions of the surface of the second epitaxial region;
• and
• implanting ions into the second epitaxial region through the exposed portions.

A method of passivating a device or its precursor that includes at least a p-type epitaxial layer, an ohmic contact layer on the p-type layer, and a bond pad on the ohmic contact, the method comprising:

• masking a portion of the ohmic contact layer and all of the bond pad;
• removing the remaining exposed ohmic metal contact layer from the epitaxial layer;
• implanting the exposed portions of the epitaxial layer with ions sufficient to render the exposed portions highly resistive;
• and
• removing the mask from the ohmic contact and the bond pad to thereby produce passivated portions of the p-type layer.