Solid-state infrared imager

A solid-state infrared imager comprising:

• a matrix array of infrared sensing pixels which are formed as an imaging area on a semiconductor substrate and each of which contains a pn-junction thermoelectric converter element to sense incident infrared radiation;
• a plurality of row selection lines each connected to said infrared sensing pixels of a corresponding row;
• a plurality of signal lines each connected to said infrared sensing pixels of a corresponding column;
• a row selection circuit which selects and drives one of said row selection lines;
• and
• a signal readout circuit which reads out signal currents output to said signal lines from said infrared sensing pixels corresponding to the row selection line driven by said row selection circuit;
• said signal readout circuit including a signal line potential stabilizer which stabilizes the potential of the signal line to a constant level, a current-voltage converter which converts the signal current flowing in the signal line to a signal voltage, and a current removal circuit which removes an undesired bias current component from the signal current;
• said signal line potential stabilizer including a potential stabilizing MOS transistor inserted in the signal line, and said current-voltage converter including an integration capacitor connected between said signal line and a ground terminal and a reset MOS transistor connected to said signal line.

A solid-state infrared imager comprising:

• a matrix array of infrared sensing pixels which are formed as an imaging area on a semiconductor substrate and each of which contains a pn-junction thermoelectric converter element to sense incident infrared radiation;
• a plurality of row selection lines each connected to said infrared sensing pixels of a corresponding row;
• a plurality of signal lines each connected to said infrared sensing pixels of a corresponding column;
• a row selection circuit which selects and drives one of said row selection lines;
• and
• a signal readout circuit which reads out signal currents output to said signal lines from said infrared sensing pixels corresponding to the row selection line driven by said row selection circuit;
• said signal readout circuit including a signal line potential stabilizer which stabilizes the potential of the signal line to a constant level, a current-voltage converter which converts the signal current flowing in the signal line to a signal voltage, and a current removal circuit which removes an undesired bias current component from the signal current;
• said signal line potential stabilizer including a potential stabilizing MOS transistor inserted in the signal line, and said current-voltage converter including a current-voltage converting MOS transistor connected between said signal line and a ground terminal, said signal line being connected to a gate of said current-voltage converting MOS transistor and a gate of a current amplifying MOS transistor, and said current-voltage converting MOS transistor serving as a gate modulating integrator circuit in association with an integration capacitor connected between said signal line and a ground terminal and a reset MOS transistor connected to said signal line.

A solid-state infrared imager comprising:

• a matrix array of infrared sensing pixels which are formed as an imaging area on a semiconductor substrate and each of which contains a pn-junction thermoelectric converter element to sense incident infrared radiation;
• a plurality of row selection lines each connected to said infrared sensing pixels of a corresponding row;
• a plurality of signal lines each connected to said infrared sensing pixels of a corresponding column;
• a row selection circuit which selects and drives one of said row selection lines;
• and
• a signal readout circuit which reads out signal currents output to said signal lines from said infrared sensing pixels corresponding to the row selection line driven by said row selection circuit;
• said signal readout circuit including a signal line potential stabilizer which stabilizes the potential of the signal line to a constant level, a current-voltage converter which converts the signal current flowing in the signal line to a signal voltage, and a current removal circuit which removes an undesired bias current component from the signal current;
• said signal line potential stabilizer including a potential stabilizing MOS transistor inserted in the signal line, and said current-voltage converter including a circuit of an impedance element and an operational amplifier which serves as said signal line potential stabilizer.