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US 2004/0203255 A1Published application
Method of forming Si-containing thin film
AssigneeMitsubishi Materials Corporation
InventorAtsushi Itsuki
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Abstract
The method of forming a Si-containing thin film forms a film using an organic Si-containing compound having a Si—Si bond represented by the following formula (I): 1 wherein R1 represents a hydrogen or a methyl group, and R2 represents a methyl group, an ethyl group, a propyl group or a tertiary butyl group.
Claims10
A method of forming a Si-containing thin film, which comprises a step of forming a film using an organic Si-containing compound having a Si—Si bond represented by the following formula (I):
- 5
- wherein R1 represents a hydrogen or a methyl group, and R2 represents a methyl group, an ethyl group, a propyl group or a tertiary butyl group.
Dependencies are inferred from the claim text.