Method of forming a dielectric layer
OwnerJune-Min Yaoinventor
Life of this patent
Estimating the term…
Abstract
A method of forming a dielectric layer on a substrate. A first in situ steam generation (ISSG) procedure is performed to form a first oxide layer on the substrate. A silicon nitride layer is formed on the first oxide layer. A second ISSG procedure is performed to form a second oxide layer on the silicon nitride layer. Moreover, during the second ISSG procedure, the silicon nitride layer can be transformed into a nitrogen-containing second oxide layer.
Claims20
A method of forming a dielectric layer on a substrate, comprising the steps of:
- performing a first in situ steam generation (ISSG) procedure to form a first oxide layer on the substrate;
- forming a silicon nitride layer on the first oxide layer;
- and
- performing a second ISSG procedure to form a second oxide layer on the silicon nitride layer;
- wherein the dielectric layer is composed of the first oxide layer, the silicon nitride layer and the second oxide layer.
A method of forming a dielectric layer on a substrate, comprising the steps of:
- performing a first in situ steam generation (ISSG) procedure to form a first oxide layer on the substrate;
- forming a silicon nitride layer on the first oxide layer;
- and
- performing a second ISSG procedure to transform the silicon nitride layer into a nitrogen-containing second oxide layer formed on the first oxide layer;
- wherein the dielectric layer is composed of the first oxide layer and the nitrogen-containing second oxide layer.
A method of forming a dielectric layer on a substrate, comprising the steps of:
- forming a silicon nitride layer on the substrate;
- and
- performing an in situ steam generation (ISSG) procedure to form a oxide layer on the silicon nitride layer;
- wherein the dielectric layer is composed of the silicon nitride layer and the oxide layer.
A method of forming a dielectric layer on a substrate, comprising the steps of:
- forming a silicon nitride layer on the substrate;
- and
- performing an in situ steam generation (ISSG) procedure to transform the silicon nitride layer into a nitrogen-containing oxide layer formed on the substrate.
Dependencies are inferred from the claim text.