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US 2004/0203235 A1Published application
Formation method for metal element, production method for semiconductor device, production method for electronic device, semiconductor device, electronic device, and electronic equipment
AssigneeSeiko Epson Corporation
InventorTakuya Miyakawa
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Abstract
A metal element formation method includes a seed layer formation step for forming a seed layer on a treatment surface of a substrate, and a plating formation step for forming a plating layer on the seed layer, wherein in the seed layer formation step, a liquid repellent section is formed on the treatment surface, and a liquid phase method is used to form the seed layer in a region outside the liquid repellent section.
Claims33
A metal element formation method comprising:
- a seed layer formation step for forming a seed layer on a treatment surface of a substrate;
- and
- a plating formation step for forming a plating layer on said seed layer,
- wherein in said seed layer formation step, a liquid repellent section for repelling a liquid material is formed on said treatment surface, and a liquid phase method is used to form said seed layer in a region outside said liquid repellent section.
1 more element
A metal element formation method comprising:
- a seed layer formation step for forming a seed layer on a treatment surface of a substrate;
- and
- a plating formation step for forming a plating layer on said seed layer,
- wherein said treatment surface comprises concave sections, and
- in said seed layer formation step, a liquid phase method is used to form said seed layer inside said concave sections.
2 more elements
Dependencies are inferred from the claim text.