Hydrogen-less CVD TiN process for FeRAM VIA0 barrier application

A method of forming a ferroelectric memory device, comprising:

• forming a bottom electrode layer, a ferroelectric dielectric layer, a top electrode layer, and a hard mask layer over a substrate;
• patterning the hard mask layer;
• patterning the bottom electrode layer, the ferroelectric dielectric layer, and the top electrode layer using the hard mask to define a ferroelectric capacitor stack;
• forming an interlayer dielectric layer over the ferroelectric capacitor stack;
• forming a via in the dielectric layer down to the hard mask;
• forming a barrier layer in the via;
• wherein at least one of the hard mask layer and the barrier layer comprises a chemical vapor deposited titanium nitride film, and
• wherein the chemical vapor deposited titanium nitride film is formed comprising:
• depositing a chemical vapor deposited titanium nitride layer;
• and
• treating the chemical vapor deposited titanium nitride layer using a plasma treatment substantially excluding hydrogen.