Method for enhancing adhesion between reworked photoresist and underlying oxynitride film
AssigneeNanya Technology Corporation
InventorsWen-Bin Wu, Yuan-Hsun Wu, Yi-Nan Chen, Teng-Yen Huang
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Abstract
A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film. A photoresist pattern layer is formed on an oxynitride layer overlying a substrate. The photoresist pattern layer is removed by acidic solution or oxygen-containing plasma. A surface treatment is performed on the oxynitride layer using a development solution to repair the damaged oxynitride layer due to removing the overlying photoresist pattern layer. A reworked photoresist pattern layer is formed on the oxynitride layer.
Claims15
A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film, comprising the steps of:
- providing a semiconductor substrate covered by a silicon oxynitride layer;
- forming a first photoresist layer on the silicon oxynitride layer;
- performing photolithography on the first photoresist layer to form a photoresist pattern layer on the silicon oxynitride layer;
- removing the photoresist pattern layer by oxygen-containing plasma;
- performing a surface treatment on the silicon oxynitride layer using tetramethyl ammonium hydroxide (TMAH) solution;
- forming a second photoresist layer on the silicon oxynitride layer;
- and
- performing photolithography on the second photoresist layer to form a reworked photoresist pattern layer on the silicon oxynitride layer.
A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film, comprising the steps of:
- providing a substrate covered by an oxynitride layer;
- forming a photoresist pattern layer on the oxynitride layer;
- removing the photoresist pattern layer;
- performing a surface treatment on the oxynitride layer using a development solution;
- and
- forming a reworked photoresist pattern layer on the oxynitride layer.
Dependencies are inferred from the claim text.