Magnetoresistive memory and method of manufacturing the same

A magnetoresistive memory element, comprising:

• a substrate;
• a layer of insulating material disposed over the substrate, the layer of insulating material comprising a distal surface that faces away from the substrate, and further comprising walls extending proximally toward the substrate and defining a groove within the layer of insulating material;
• a liner disposed conformably in contact with the walls of the groove, the liner comprising distal edges;
• electrically conductive material disposed in the groove and over the liner;
• a protective layer disposed in the groove and over the conductive material, the protective layer comprising an outer surface that faces away from the conductive material, the outer surface substantially level with the distal surface of the insulating material;
• and
• at least one layer of magnetoresistive material disposed over at least a portion of the protective layer.

A magnetoresistive random access memory (MRAM) device having at least one magnetic memory cell comprising:

• a substrate;
• a layer of insulating material disposed over the substrate, walls of the layer of insulating material defining a groove, the layer of insulating material further comprising an outer surface that faces away from the substrate;
• a first electrically conductive material disposed within the groove;
• a liner disposed between walls of the groove and the first electrically conductive material;
• a protective layer comprising second electrically conductive material disposed in the groove and over the first electrically conductive material, the protective layer comprising a first surface in contact with the first electrically conductive material and a second surface opposite the first surface, the second surface level with a plane defined by the outer surface of the layer of insulating material;
• and
• at least one layer of magnetoresistive material disposed over at least a portion of the protective layer.

A magnetoresistive random access memory (MRAM) device having at least one magnetic memory cell comprising:

• a substrate;
• a layer of insulating material disposed over the substrate, the layer of insulating material comprising an outer surface that faces away from the substrate, the layer of insulating material further comprising walls that define a groove, side-walls of the groove meeting the outer surface of the layer of insulating material to define edges or lips;
• a copper line disposed within the groove;
• a liner disposed between walls of the groove and the copper line;
• a protective layer disposed in the groove and over the copper line, the protective layer comprising a first surface in contact with the copper line and a second surface opposite the first surface;
• and
• at least one layer of magnetoresistive material disposed over at least a portion of the protective layer.