Semiconductor device and method of fabricating same

A method of fabricating a semiconductor device having a Silicon-On-Insulator structure which includes a semiconductor layer formed on an insulator, and having at least one Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) element,

• wherein said MOSFET element comprises a source region;
• a drain region which is opposed to said source region;
• a body region disposed between said source region and said drain region;
• and a gate region positioned on or close to a surface of said body region, so as to form an electrically conducting channel in said body region,
• said method comprises the step of introducing impurities using a mask covering an area above said drain region to form an extracting region being in contact with both of said body region and said source region, said extracting region having a conductivity type which is the same as a conductivity type of said body region and having a concentration higher than that of said body region.

A method of fabricating a semiconductor device having a Silicon-On-Insulator structure which includes a semiconductor layer formed on an insulator, and having at least one Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) element,

• wherein said MOSFET element comprises a source region;
• a drain region which is opposed to said source region;
• a body region disposed between said source region and said drain region;
• and a gate region positioned on or close to a surface of said body region, so as to form an electrically conducting channel in said body region,
• said method comprises the step of introducing impurities by an oblique ion implantation using said gate region as a mask to form an extracting region being in contact with both of said body region and said source region, said extracting region having a conductivity type which is the same as a conductivity type of said body region and having a concentration higher than that of said body region.