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US 2004/0201037 A1Published application
Heterostructure semiconductor device
AssigneeSensor Electronic Technology, Inc.
InventorsQhalid Fareed, Remigijus Gaska, Michael Shur
Life of this patent
Estimating the term…
Abstract
A heterostructure semiconductor device that includes a composite layer between an active layer and a gate. The composite layer includes a strain matching layer and a barrier layer. The strain matching layer reduces the strain between the barrier layer and the active layer. The device can incorporate various additional layers as well as gate and/or contact configurations to obtain desired device performance characteristics.
Claims20
A heterostructure semiconductor device comprising:
- a substrate;
- a buffer layer on the substrate;
- an active layer on the buffer layer, the active layer comprising at least one group III element and N;
- and
- a composite layer on the active layer, the composite layer comprising:
- a strain matching layer over the active layer, the strain matching layer comprising three group III elements and N;
- and
- a barrier layer on the strain matching layer, the barrier layer comprising at least one group III element and N.
5 more elements
A field effect transistor comprising:
- a substrate;
- a buffer layer on the substrate, the buffer layer comprising AlN;
- an active layer on the buffer layer, the active layer comprising GaN;
- and
- a composite layer over the active layer, the composite layer comprising:
- a strain matching layer over the active layer, the strain matching layer comprising AlInGaN;
- and
- a barrier layer on the strain matching layer, the barrier layer comprising AlGaN.
5 more elements
A field effect transistor comprising:
- a substrate;
- a buffer layer on the substrate, the buffer layer comprising AlN;
- an active layer on the buffer layer, the active layer comprising GaN;
- and
- a composite layer, the composite layer comprising:
- a quantum well layer over the active layer, wherein the quantum well layer comprises InGaN;
- a strain matching layer on the quantum well layer, the strain matching layer comprising AlInGaN;
- and
- a barrier layer on the strain matching layer, the barrier layer comprising AlGaN.
6 more elements
Dependencies are inferred from the claim text.