Loading patent…
OwnerHaim Hermon, Asaf Zuck +3inventors
InventorsHaim Hermon, Asaf Zuck, Misha Lukach, Rima Kozlov, Michael Schieber
Estimating the term…
An element adapted for at least one use selected from high energy radiation detection, imaging and barrier use, which includes a planar substrate on a surface of which there is a layer polycrystalline mercuric iodide, which has been deposited from the vapor phase, having a thickness within the range of from more than 0.5 mm and up to about 10 mm. A process for preparing an element having such thicknesses. A planar substrate, having deposited on a surface thereof, a layer of mercuric iodide in at least two discrete adjacent sub-layers having a total thickness within the range of from greater than 0.5 mm to about 10 mm. A system adapted for at least one purpose selected from radiation detection, radiation imaging and high energy absorption, which includes an element having thicknesses as described above.
An element, adapted for at least one use selected from high energy radiation detection, imaging and barrier use, which comprises a planar substrate on a surface of which there is a layer of polycrystalline mercuric iodide, which has been deposited from the vapor phase, having a thickness within the range of from more than 0.5 mm and up to about 10 mm, said element being also characterized by at least one of the following features:
A process for preparing an element, adapted for at least one use selected from high energy radiation detection, imaging and barrier use, which comprises depositing from the vapor phase a polycrystalline mercuric iodide layer on a surface of a planar substrate, until said layer has a desired thickness selected from the range of from more than 0.5 mm and up to about 10 mm.
A planar substrate, having deposited on a surface thereof, a layer of mercuric iodide in at least two discrete adjacent sub-layers having a total thickness within the range of from >0.5 mm to about 10 mm.
A planar substrate, having deposited on a surface thereof, a layer of mercuric iodide having a thickness within the range of from >0.5 mm to about 10 mm.
Apparatus for making an element comprising a planar substrate and adapted for at least one use selected from high energy radiation detection, imaging and barrier use, by physical deposition of a layer on said substrate of polycrystalline mercuric iodide from the vapor phase, said layer having a thickness within the range of from more than 0.5 mm and up to about 10 mm, said apparatus including a horizontal-type furnace.
A system adapted for at least one purpose selected from radiation detection, radiation imaging and high energy absorption, which includes at least one radiation detecting, imaging and/or energy absorption element, said element being an element comprised of a planar substrate on a surface of which there is a layer of polycrystalline mercuric iodide, which has been deposited from the vapor phase, having a thickness within the range of from more than 0.5 mm and up to about 10 mm, said element being also characterized by at least one of the following features:
(Cancelled)
(Cancelled)
Dependencies are inferred from the claim text.