Method for controlling a process for fabricating integrated devices
AssigneeApplied Materials, Inc.
InventorsMatthew F. Davis, Lei Lian, Barbara Schmidt
Life of this patent
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Abstract
A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch and external substrate processing equipment. In one exemplary application, the method is used during a multi-pass process for fabricating a capacitive structure of a trench capacitor.
Claims52
A method of controlling a process of fabricating integrated devices on a substrate, comprising:
- measuring at least one pre-etch dimension and at least one post-etch dimension of at least one structure on the substrate;
- and
- adjusting a process recipe of an etch process for etching the substrate and a process recipe of at least one pre-etch process and/or at least one post-etch process using the results of measuring the dimensions on the structures.
A computer-readable medium containing software that when executed by a computer causes a semiconductor wafer processing system to control a process of fabricating integrated devices on a substrate using a method, comprising:
- measuring at least one pre-etch dimension and at least one post-etch dimension of at least one structure on the substrate;
- and
- adjusting a process recipe of an etch process for etching the substrate and a process recipe of at least one pre-etch process and/or at least one post-etch process using the results of measuring the dimensions on the structures.
A method of controlling a process of fabricating integrated devices on a substrate comprising:
- obtaining process measurement data from a first substrate;
- and
- adjusting a process sequence in response to the process measurement data.
A method of controlling a process of fabricating integrated devices on a substrate comprising:
- executing a multi-pass process, wherein the substrate is processed more than once by an etch process and at least one pre-etch process and/or at least one post-etch process while forming at least one structure on the substrate, where each time the substrate is processed by the etch process is a pass;
- during each pass, measuring at least one pre-etch dimension and at least one post-etch dimension of at least one structure on the substrate;
- and
- adjusting a process recipe of the etch process for etching the substrate and a process recipe of at least one pre-etch process and/or at least one post etch process using the results of measuring the dimensions on the structures.
Dependencies are inferred from the claim text.