Method for growing single crystal GaN on silicon
AssigneeHoneywell International Inc.
InventorsAndrzej Peczalski, Thomas E. Nohava
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Abstract
A method for growing a single crystal GaN film at least 2 microns thick on a Si substrate is disclosed. The method includes growing a prelayer, a buffer layer including AlN on the Si substrate and a plurality of GaN layers and AlN layers deposited alternatively on the top of the AlN buffer layer. By controlling the deposition conditions and timings of the plurality of GaN layers and AlN layers, the single crystal GaN film can be grown thicker than 2 microns without cracks or pits.
Claims41
A method for growing a single crystal GaN (gallium nitride) film on a Si substrate, comprising:
- depositing at least one initial layer on a top of the Si substrate using Trimethylaluminum (TMAl) in a hydrogen atmosphere;
- and
- depositing alternately a plurality of GaN layers and interlayers on a top of the initial layer with each of the interlayers interspaced between adjacent GaN layers
- wherein the number of the interlayers is N and the number of the GaN layer is N+1 and N is an integer no less than 1, and
- wherein each of the interlayers comprises an odd number of sub-layers and a bottom sub-layer and a top sub-layer comprises AlN.
(Canceled)
(Canceled)
A method for growing a single crystal GaN (gallium nitride) film on a Si substrate, comprising:
- depositing a prelayer on a top of the Si substrate;
- depositing a buffer layer on a top of the prelayer using Trimethylaluminum (TMAl) in a hydrogen atmosphere;
- and
- depositing alternately a plurality of GaN layers and interlayers on a top of the buffer layer with each of the interlayers interspaced between adjacent GaN layers,
- wherein the number of the interlayers is N and the number of the GaN layer is N+1, and N is an integer no less than 1, and
- wherein each of the interlayers comprises an odd number of sub-layers and a bottom sub-layer and a top sub-layer comprises AlN.
A single crystal GaN film structure, comprising:
- a Si(1 1 1) substrate;
- at least one initial layer deposited on the Si(1 1 1) substrate which is formed by metalorganic chemical vapor deposition (MOCVD) by using trimethylaluminum (TMAl) as a reactive gases;
- and
- a plurality of GaN layers and interlayers alternatively deposited on the initial layer with a GaN layer directly deposited on a top of the initial layer and each of the interlayers interspaced between adjacent GaN layers,
- wherein the number of the interlayers is N and the number of the GaN layer is N+1 and N is an integer no less than 1, and
- wherein each of the interlayers comprises an odd number of sub-layers and a bottom sub-layer and a top sub-layer comprises AlN.
Dependencies are inferred from the claim text.