Organometallic precursor for forming metal film or pattern and method of forming metal film or pattern using the same

An organometallic precursor represented by the following Formula 1, for forming a metal film or pattern:

• LnMmL′ pXq Formula 1
• {wherein,
• M is a transition metal;
• L′ is a neutral ligand;
• X is an anion that may coordinate with the transition metal;
• m is an integer of 1 to 10, provided that when m is two or more, each M may or may not be the same as each other;
• p is an integer of 0 to 40, and q is an integer of 0 to 10, provided that when p or q is two or higher, L′ s or Xs are independently identical or different with one another, and p and q are not 0 at the same time;
• and
• L is a hydrazine compound coordinating the transition metal, represented by the following Formula 2:
• R1R2NNR3R4 Formula 2
• [wherein,
• R1, R2, R3 and R4 are independently hydrogen;
• alkyl or aryl of 1 to 20 carbon atoms having substitution groups;
• or
• 3
• provided that the substitution groups are selected from the group consisting of halogen groups including F, Cl, Br or I, amine groups, hydroxyl groups, —SH(sulfhydril) groups, cyano groups, sulphonic acid groups (SO3H), R6S—, R6O—(R6 is an alkyl or aryl group containing 1 to 20 carbons),
• 4
• and nitrile groups, and R5 is R′, R′2N, or R′O (R′ is hydrogen, or an alkyl or aryl group containing 1 to 20 carbons)];
• and
• n is an integer of 1 to 40, provided that when n is two or more, Ls are independently identical or different with one another}.