Manufacturing method of semiconductor device
AssigneeFujitsu Limited
InventorsHaruhito Nishibe, Michio Oryoji
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Abstract
In a via-first Dual Damascene method, after a via hole and a wiring trench are formed, an SiN film, an exposed portion of an SiC film and an exposed portion of an SiC film are removed by etching. As a result, the via hole reaches a Cu wire, and the wiring trench reaches an SiOC film. A reaction product adheres mainly to a side wall portion of the wiring trench. The reaction product also adheres to other spots, but an amount of adherence to the side wall portion is the largest. Subsequently, oxygen plasma treatment is performed for insides of the via hole and the wiring trench. As a result of this oxygen plasma treatment, the reaction product is removed.
Claims15
A manufacturing method of a semiconductor device having a process of forming a wire in accordance with a Damascene method, comprising the steps of:
- forming a diffusion preventing film and an interlayer insulating film in sequence over a conductive layer;
- forming an opening reaching the diffusion preventing film in the interlayer insulating film;
- performing dry etching for removing a portion of the diffusion preventing film exposed from the opening formed in the interlayer insulating film;
- performing plasma treatment for at least an inside of the opening by using plasma of a gas containing oxygen or hydrogen;
- and
- burying a wire material in the opening.
Dependencies are inferred from the claim text.