Method for manufacturing a semiconductor component having a barrier-lined opening
AssigneeAdvanced Micro Devices, Inc.
InventorsPin-Chin Connie Wang, Richard J. Huang
Life of this patent
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Abstract
A semiconductor component having a metallization system that includes a thin conformal multi-layer barrier structure and a method for manufacturing the semiconductor component. A layer of dielectric material is formed over a lower level interconnect. A hardmask is formed over the dielectric layer and an opening is etched through the hardmask into the dielectric layer. The opening is lined with a thin conformal multi-layer barrier using atomic layer deposition. The multi-layer barrier lined opening is filled with an electrically conductive material which is planarized.
Claims37
A method for manufacturing a semiconductor component, comprising:
- providing a semiconductor substrate having a major surface and further providing an interconnect layer over the major surface;
- forming a dielectric material over the interconnect layer;
- forming an opening in the dielectric material, the opening having sidewalls;
- forming a multi-layer barrier in the opening to form a barrier-lined opening;
- and
- filling the barrier-lined opening with an electrically conductive material.
A method for manufacturing a semiconductor component, comprising:
- forming a damascene structure over a lower metal level, the damascene structure comprising an insulating material having a major surface and an opening extending into the insulating material;
- forming a multi-layer barrier in the opening;
- and
- forming an electrically conductive material over the multi-layer barrier.
A method for reducing electromigration in a semiconductor component, comprising:
- providing a damascene structure over a lower electrically conductive level, the damascene structure comprising a dielectric material having a major surface and an opening extending into the dielectric material;
- lining the opening and a portion of the major surface with a first layer of electrically conductive material to form a barrier-lined opening;
- lining the first layer of electrically conductive material with a second layer of electrically conductive material, the first and second layers of electrically conductive material cooperating to form a multi-layer barrier film;
- and
- disposing a metal over the multi-layer barrier film.
A semiconductor component, comprising:
- a damascene structure over a lower electrically conductive level, the damascene structure comprising a dielectric material having a major surface and an opening extending into the dielectric material;
- a multi-layer barrier lining the opening and a portion of the major surface;
- and
- an electrically conductive material disposed on the multi-layer barrier in the opening.
Dependencies are inferred from the claim text.