Method of forming thin film using atomic layer deposition

Abstract

Provided is an atomic layer deposition (ALD) method for forming a thin film using two types of reactants that are different in surface adsorptivity for a source material. According to the ALD method, first, a source material is fed into a reaction chamber and then undergoes first purging. Next, a first reactant with good surface adsorptivity for the source material and a second reactant with poor surface adsorptivity for the source material are fed into the reaction chamber. The second reactant may be fed simultaneously with the first reactant or after the purging of the first reactant. Next, a radio frequency is applied to the reaction chamber to thereby transform the second reactant into a plasma state. Next, the reaction chamber is subjected to a second purging. If the thickness of a deposited film is not sufficient, the above-described processes are repeated.

Dependencies are inferred from the claim text.