Device and method for protecting against oxidation of a conductive layer in said device

A method of passivating a conductive material, comprising:

• providing said conductive material, wherein said conductive material has an ability
• to associate with oxygen;
• and
• exposing said conductive material to a plasma.

A method of forming a capacitor, comprising:

• forming a capacitor plate, comprising:
• providing a first conductive layer in a first environment;
• exposing said first conductive layer to a passivation gas;
• and
• depositing a second conductive layer over said first conductive layer.

A method of forming a conductive line over a substrate, comprising:

• depositing a conductive plug over said substrate;
• depositing a nitride over said plug in an ambient atmosphere, wherein said nitride has a surface bond;
• treating said surface bond;
• and
• depositing a metal over said nitride.

A damascene process, comprising:

• depositing a first layer of insulation over a substrate;
• etching a first hole in said first layer of insulation;
• filling said first hole with a metal;
• depositing a second layer of insulation over said first layer of insulation;
• etching a second hole in said second layer of insulation and over said first hole;
• providing an interface layer over said metal and within said second hole;
• and
• exposing said interface layer to a nitrogen/hydrogen plasma.

A semiconductor process, comprising:

• providing a first conductive layer,
• providing a second conductive layer on said first conductive layer, and
• inhibiting a formation of oxide between said first conductive layer and said second
• conductive layer with a passivator material.

A method of forming a semiconductor device, comprising:

• depositing a first conductive layer having a surface;
• incorporating an oxygen-free material into said surface;
• depositing a second conductive layer on said surface;
• and
• exposing said second conductive layer to a thermal process.

A method of constructing a multi-layered device, comprising:

• providing a first conductive layer in a first environment;
• protecting said first conductive layer from oxygen association, wherein said protecting step is accomplished with a second environment formed of a gas selected from a group consisting of:
• a plasma,
• a non-ionized gas,
• a nitrogen-containing gas,
• a nitrogen-free gas,
• an in situ gas,
• an ex situ gas, and
• combinations thereof;
• and
• providing a second conductive layer on said first conductive layer.

A method of processing a semiconductor device, comprising:

• depositing a first conductive material;
• introducing said first conductive material to a nitrogen-containing plasma;
• depositing a second conductive material over said first conductive material;
• and
• exposing said first conductive material and said second conductive material to a thermal process.

A method of passivating a multilayer conductive structure, comprising:

• layering a first conductive material;
• introducing a selection of N2/H2, N2, and NH3 gas to said first conductive material;
• releasing nitrogen from said gas with electromagnetic energy;
• and
• layering a second conductive material over said first conductive material.

A method of treating a wafer, comprising:

• depositing a first conductive layer onto said wafer;
• exposing said wafer in situ to a reducing environment;
• and
• depositing a second conductive layer.

A method of processing a wafer, comprising:

• depositing a first conductive layer having a grain boundary;
• and
• associating a non-oxygen material with said grain boundary by exposing said first conductive layer to a selection consisting of:
• an N2/H2 plasma,
• an N2 plasma,
• an H2 plasma,
• an NH3 plasma,
• an NH3 non-plasma gas,
• a silane gas, and
• a combination thereof.

A semiconductor device, comprising:

• a substrate;
• a first conductive layer over said substrate;
• a dielectric over said substrate;
• a second conductive layer over said first conductive layer;
• and
• a non-oxygen material between said first conductive layer and said second conductive layer.

A capacitor, comprising:

• a bottom plate comprising tungsten nitride and having a surface;
• nitrogen at said surface;
• a dielectric comprising tantalum pentoxide over said surface;
• and
• a top plate over said dielectric.

A capacitor, comprising:

• a first plate;
• a dielectric over said first plate;
• and
• a second plate over said dielectric, comprising:
• a first non-polysilicon conductive layer over said dielectric, and
• a second conductive layer over said first non-polysilicon conductive layer.

A pair of series-coupled capacitors, comprising:

• a first conductive layer;
• a dielectric over said first conductive layer;
• a second conductive layer over said dielectric;
• a third conductive layer less than 10 angstroms over said second conductive layer, and
• an oxide of said third conductive layer between said second conductive layer and said third conductive layer.

A semiconductor device, comprising:

• a conductive line;
• a plug under said conductive line;
• and
• an interposing layer between said conductive line and said plug and comprising a non-oxygen stuffing material.