Method for fabricating semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsSeung Woo Jin, Tae Hyeok Lee, Bong Soo Kim
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Abstract
The present invention relates to a method for fabricating a semiconductor device. The method comprises the steps of: 1. A method for fabricating a semiconductor device, which comprises the steps of: forming a gate line on a semiconductor substrate; forming junction regions in the semiconductor substrate at both sides of the gate line; forming and selectively removing an interlayer insulating film on the substrate to form contact holes exposing the junction regions; forming plugs in the contact holes; and implanting impurity ions into the plugs; and annealing the junction regions.
Claims10
A method for fabricating a semiconductor device, which comprises the steps of:
- forming a gate line on a semiconductor substrate;
- forming junction regions in the semiconductor substrate at both sides of the gate line;
- forming and selectively removing an interlayer insulating film on the resulting substrate to form contact holes exposing the junction regions;
- forming plugs in the contact holes;
- and
- implanting impurity ions into the plugs;
- and
- annealing the junction regions.
Dependencies are inferred from the claim text.