Simplified magnetic memory cell
AssigneeHewlett-Packard Development Company, L.P.
InventorThomas Anthony
Life of this patent
Estimating the term…
Abstract
An exemplary magnetic memory cell comprises a ferromagnetic cladding, the cladding at least partially surrounding a non-magnetic region, a spacer layer over the ferromagnetic cladding, and a ferromagnetic data layer over at least a portion of the spacer layer.
Claims35
A nonvolatile memory array including a plurality of magnetic memory cells, each of said magnetic memory cells comprising:
- a ferromagnetic cladding,
- said cladding at least partially surrounding a non-magnetic region;
- a spacer layer over said ferromagnetic cladding;
- and
- a ferromagnetic data layer over at least a portion of said spacer layer.
A nonvolatile memory array including a plurality of magnetic memory cells, each of said magnetic memory cells comprising:
- a ferromagnetic cladding,
- said cladding at least partially surrounding a non-magnetic region;
- a cap over said non-magnetic region;
- a spacer layer over said cap and said ferromagnetic cladding;
- and
- a ferromagnetic data layer over at least a portion of said spacer layer.
A nonvolatile memory array including a plurality of magnetic memory cells, each of said magnetic memory cells comprising:
- a ferromagnetic cladding;
- a non-magnetic region:
- being at least partially surrounded by said ferromagnetic cladding, and comprising an insulating material;
- a spacer layer over said ferromagnetic cladding;
- a ferromagnetic data layer over at least a portion of said spacer layer;
- and
- a conductor over said ferromagnetic data layer.
A nonvolatile memory array including a plurality of magnetic memory cells, each of said magnetic memory cells comprising:
- a ferromagnetic data layer;
- a spacer layer over said ferromagnetic data layer;
- and
- a ferromagnetic cladding over said spacer layer,
- said cladding at least partially sourrounding a non-magnetic region.
A method for manufacturing a magnetic memory cell comprising:
- forming a ferromagnetic cladding at least partially surrounding a non-magnetic region;
- forming a spacer layer over at least a portion of said ferromagnetic cladding;
- and
- forming a ferromagnetic data layer over at least a portion of said spacer layer.
A method for manufacturing a magnetic memory cell, comprising:
- forming a ferromagnetic cladding:
- said cladding at least partially surrounding a non-magnetic region;
- and
- said non-magnetic region comprising an insulating material;
- forming a spacer layer over said ferromagnetic cladding and said non-magnetic region;
- and
- forming ferromagnetic data layer over at least a portion of said spacer layer.
A nonvolatile memory array including a plurality of magnetic memory cells, each of said magnetic memory cells being made by a process comprising:
- forming a ferromagnetic cladding having a non-magnetic region;
- forming a spacer layer over said ferromagnetic cladding;
- and
- forming a ferromagnetic data layer over at least a portion of said spacer layer.
A nonvolatile memory array including a plurality of magnetic memory cells, each of said magnetic memory cells comprising:
- (a) means for magnetically storing data;
- (b) means for permitting magnetic tunneling effects during processing of said data;
- and
- (c) means for separating said (a) from said (b).
Dependencies are inferred from the claim text.