Method of forming a flux concentrating layer of a magnetic device
OwnerJaynal A. Molla, John J. D'Urso +1inventors
InventorsJaynal A. Molla, John J. D'Urso, J. Jack Ren
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Abstract
A method of forming a magnetic device, especially the digit line of a magnetic random access memory (MRAM) device is disclosed. The digit line includes a stack of materials that includes a barrier layer, a seed layer and a soft magnetic layer that is electrochemically deposited. Preferably, the barrier layer and the seed layer are formed by physical vapor deposition (PVD) and the soft magnetic layer is formed by electroless plating. In one embodiment, the barrier layer includes tantalum, the seed layer includes ruthenium and the soft magnetic layer includes nickel and iron.
Claims20
A method of forming a magnetic device, the method comprising:
- providing a substrate;
- forming a dielectric layer over the substrate;
- forming a trench within the dielectric layer;
- forming a first barrier layer within the trench;
- forming a first seed layer over the first barrier layer;
- electrochemically depositing a soft magnetic material over the first seed layer;
- forming a second barrier layer over the soft magnetic material;
- and
- forming a metal layer over the second barrier layer.
A method of forming a magnetic device, the method comprising:
- providing a substrate;
- forming a dielectric layer over the substrate;
- forming a trench within the dielectric layer;
- depositing a first barrier layer within the trench;
- depositing a first seed layer over the first barrier layer;
- electrolessly plating a soft magnetic material over the first seed layer;
- depositing a second barrier layer over the soft magnetic material;
- and
- forming a metal layer over the second barrier layer.
A method of forming a magnetic device, the method comprising:
- providing a semiconductor substrate;
- forming a dielectric layer over the semiconductor substrate;
- forming a trench within the dielectric layer;
- depositing a first barrier layer comprising tantalum within the trench, wherein the depositing is performed using physical vapor deposition (PVD);
- depositing a first seed layer comprising ruthenium over the first barrier layer, wherein the depositing is performed using PVD;
- electrolessly plating a soft magnetic material comprising iron and nickel over the first seed layer;
- depositing a second barrier layer comprising tantalum over the soft magnetic material, wherein the depositing is performed using PVD;
- depositing a second seed layer comprising copper over the second barrier layer;
- plating a metal layer comprising copper over the second seed layer;
- and
- removing portions of the first barrier layer, the first seed layer, the soft magnetic material, the second barrier layer and the metal layer that are outside the trench.
Dependencies are inferred from the claim text.