Method of patterning photoresist on a wafer using an attenuated phase shift mask

A method for patterning photoresist on a wafer utilizing optical radiation, the method comprising:

• providing an attenuated phase shift mask including a substrate and an attenuation stack overlying the substrate, the attenuation stack comprising a chromium layer or a ruthenium layer overlying the substrate, a tantalum silicon oxide layer overlying the chromium layer or the ruthenium layer, and a tantalum silicon nitride layer overlying the tantalum silicon oxide layer;
• and
• patterning a photoresist layer on the wafer using the mask, wherein patterning comprises passing optical radiation through the attenuated phase shift mask to expose portions of the photoresist layer.

A method for patterning photoresist on a wafer utilizing optical radiation, the method comprising:

• providing an attenuated phase shift mask including a substrate and an attenuation stack overlying the substrate, wherein the attenuation stack comprises a first layer, a second layer, and a third layer, wherein the first layer comprises one of chromium or ruthenium, the second layer comprises tantalum silicon oxide, and the third layer comprises tantalum silicon nitride;
• and
• patterning a photoresist layer on the wafer using the mask, wherein patterning comprises passing optical radiation through the attenuated phase shift mask to expose portions of the photoresist layer.