Method of low-temperature oxidation of silicon using nitrous oxide
AssigneeSharp Laboratories of America, Inc.
InventorYoshi Ono
Life of this patent
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Abstract
A method of low-temperature oxidation of a silicon substrate includes placing a silicon wafer in a vacuum chamber; maintaining the silicon wafer at a temperature of between about 25° C. and 600° C.; introducing N2O gas into the vacuum chamber; dissociating the N2O gas into oxygen(1D) with a xenon laser generating light at a wavelength of about 172 nm and flowing the oxygen(1D) over the silicon wafer; and forming an oxide layer on at least a portion of the silicon wafer.
Claims12
A method of low-temperature oxidation of a silicon substrate comprising:
- placing a silicon wafer in a vacuum chamber;
- maintaining the silicon wafer at a temperature of between about 25° C. and 600° C.;
- introducing N2O gas into the vacuum chamber;
- dissociating the N2O gas into oxygen(1D) with a xenon laser generating light at a wavelength of about 172 nm and flowing the oxygen(1D) over the silicon wafer;
- and
- forming an oxide layer on at least a portion of the silicon wafer.
A method of low-temperature oxidation of a silicon substrate comprising:
- placing a silicon wafer in a vacuum chamber having a heatable wafer chuck therein;
- maintaining the silicon wafer at a temperature of between about 25° C. to 600° C.;
- introducing N2O gas in the vacuum chamber;
- dissociating the N2O gas into radical oxygen(1D) with a xenon laser generating light at a wavelength of about 172 nm and flowing the radical oxygen(1D) over the silicon wafer;
- and
- forming an oxide layer on at least a portion of the silicon wafer in a time period of between about one minute to 100 minutes.
A method of low-temperature oxidation of a silicon substrate comprising:
- placing a silicon wafer in a vacuum chamber having a heatable chuck which is heatable to a temperature of at least about 350° C.;
- maintaining the silicon wafer at a temperature of between about 25° C. and 600° C.;
- introducing N2O gas into the vacuum chamber;
- dissociating the N2O gas into radical oxygen(1D) with a xenon laser generating light at a wavelength of about 172 nm and flowing the radical oxygen(1D) over the silicon wafer for a time period of between about one minute and 100 minutes;
- and
- forming an oxide layer on at least a portion of the silicon wafer having thickness of between about 15 Å to 50 Å.
Dependencies are inferred from the claim text.