Semiconductor device and a fabrication method thereof
AssigneeAnam Semiconductor Inc.
InventorYoung-Min Kwon
Life of this patent
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Abstract
A semiconductor device and fabrication method thereof that uses a far ultraviolet ray photolithography, which may be used to prevent the lift phenomenon of a photoresist pattern, is disclosed. The semiconductor device may be fabricated by the process of: forming a film which is an object of forming a pattern on a structure of a semiconductor substrate; forming a anti-reflection layer on the film to form a stacking structure including the film and the anti-reflection layer; performing a plasma treatment to form grooves on a upper surface of the stacking structure; forming a photoresist pattern on the stacking structure on which the grooves are formed; and etching the stacking structure using the photoresist pattern as a mask to form a stacking structure pattern.
Claims20
A fabricating method of a semiconductor device comprising:
- (a) forming a film which to form a pattern on a structure of a semiconductor substrate;
- (b) forming an anti-reflection layer on the film to form a stacking structure including the film and the anti-reflection layer;
- (c) performing a plasma treatment to form grooves on an upper surface of the stacking structure;
- (d) forming a photoresist pattern on the stacking structure on which the grooves are formed;
- and
- (e) etching the stacking structure using the photoresist pattern as a mask to form a stacking structure pattern.
A semiconductor device comprising:
- a film pattern formed on a structure of a semiconductor substrate;
- and
- an anti-reflection layer which is formed on the film pattern and has the substantially the same pattern as the film pattern and grooves thereon.
Dependencies are inferred from the claim text.