Method for forming fuse integrated with dual damascene process
AssigneeSamsung Electronics Co., Ltd.
InventorsJa-Young Choi, Ki-Young Lee
Life of this patent
Estimating the term…
Abstract
A method for forming a fuse includes forming an interconnection pattern and a fuse pattern on a substrate using a damascene process. A passivation layer is formed on a surface of the substrate over the interconnection pattern and the fuse pattern. Then, the passivation layer is patterned to form a pad opening that exposes a portion of the interconnection pattern. A metal pad is formed on the interconnection pattern in the pad opening. A portion of the metal pad extends over the passivation layer. The passivation layer on the fuse pattern is partially etched to form a fuse opening.
Claims17
A method for forming a fuse comprising:
- forming an interconnection pattern and a fuse pattern on a substrate using a damascene process;
- forming a passivation layer on an entire surface of the substrate including the interconnection pattern and the fuse pattern;
- patterning the passivation layer to form a pad opening that exposes a portion of the interconnection pattern;
- forming a metal pad on the interconnection pattern in the pad opening, wherein a portion of the metal pad extends over the passivation layer;
- and
- thereafter, partially etching the passivation layer on the fuse pattern to form a fuse opening.
A method comprising:
- prior to forming a fuse opening on a substrate, forming a metal pad in a pad opening, wherein the pad opening exposes a portion of an interconnection pattern on the substrate.
Dependencies are inferred from the claim text.