Modifying circuitry features in radiation sensitive layers with active secondary exposure masks
AssigneeIntel Corporation
InventorsFred Chen, Jeff Farnsworth, Wen-Hao Cheng
Life of this patent
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Abstract
A mask having a pattern to modify a circuitry feature that has been exposed in a radiation sensitive layer by transmitting modifying radiation to a region of the radiation sensitive layer containing the exposed circuitry feature is described. The mask may reduce subwavelength distortions and proximity effect distortions of the exposed circuitry feature. The mask may be used to manufacture a semiconductor device having circuitry that is based on the modified circuitry feature.
Claims24
A mask comprising a pattern to modify a circuitry feature exposed in a radiation sensitive layer by transmitting modifying radiation according to the pattern to a region of the radiation sensitive layer containing the circuitry feature.
A semiconductor device created by using a first mask having a first pattern to expose a first feature in a radiation sensitive layer and using a second mask having a second pattern to modify the first feature by providing modifying radiation to a region of the radiation sensitive layer containing the first feature.
A second mask having a second pattern that corresponds to a first pattern of a first mask, the first pattern to expose an exposure feature in a radiation sensitive layer, the second pattern comprising a transparent portion to reduce a proximity effect distortion of the exposure feature by providing modifying radiation to a region of the radiation sensitive layer that contains the exposure feature.
A method comprising:
- creating a circuitry feature in a radiation sensitive layer coupled with a wafer during a first exposure by transmitting radiation to the layer through a first mask having a first circuitry pattern;
- and
- modifying the circuitry feature during a second exposure by transmitting modifying radiation to the layer through a second mask having a second circuitry pattern and a transparent portion corresponding to a region of the layer containing the circuitry feature.
Dependencies are inferred from the claim text.