Contacts to semiconductor fin devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYee-Chia Yeo, Fu-Liang Yang, Chenming Hu
Life of this patent
Estimating the term…
Abstract
A method for forming a contact to a semiconductor fin which can be carried out by first providing a semiconductor fin that has a top surface, two sidewall surfaces and at least one end surface; forming an etch stop layer overlying the fin; forming a passivation layer overlying the etch stop layer; forming a contact hole in the passivation layer exposing the etch stop layer; removing the etch stop layer in the contact hole; and filling the contact hole with an electrically conductive material.
Claims54
A method for forming a contact to a semiconductor fin comprising the steps of:
- providing a semiconductor fin having a top surface, two sidewall surfaces and at least one end surface;
- forming an etch stop layer overlying said fin;
- forming a passivation layer overlying the etch stop layer;
- forming a contact hole in said passivation layer exposing said etch stop layer;
- removing said etch stop layer in said contact hole;
- and
- filling said contact hole with an electrically conductive material.
A method for forming a contact to a multiple-gate transistor comprising the steps of:
- providing a multiple-gate transistor comprising a fin;
- forming an etch stop layer overlying said fin;
- forming a passivation layer overlying said etch stop layer;
- forming a contact hole in said passivation layer exposing said etch stop layer;
- removing said etch stop layer exposed in said contact hole;
- and
- filling said contact hole with an electrically conductive material.
A contact to a semiconductor fin comprising:
- a semiconductor fin comprising a top surface and two sidewall surfaces formed on an insulating substrate;
- a dielectric layer overlying said fin and overlying portion of said insulating substrate;
- and
- a contact formed of an electrically conductive material in electrical communication with said fin on at least one surface not covered by the dielectric layer.
Dependencies are inferred from the claim text.