Semiconductor device and method of manufacturing same

A semiconductor device comprising:

• a semiconductor substrate;
• and
• a capacitor provided above the semiconductor substrate,
• the capacitor comprising:
• a lower electrode containing metal;
• a dielectric film containing tantalum oxide or niobium oxide;
• an upper electrode containing metal;
• and
• at least one of a lower barrier which is provided between the lower electrode and the dielectric film and an upper barrier layer which is provided between the upper electrode and the dielectric film,
• the lower barrier layer being insulating layer which contains silicon and nitrogen and containing the nitrogen at least in a portion on a side contacting the lower electrode,
• the upper barrier layer being insulating layer which contains silicon and nitrogen and containing the nitrogen at least in a portion on a side contacting the upper electrode.

A semiconductor device comprising:

• a semiconductor substrate;
• and
• a capacitor provided above the semiconductor substrate,
• the capacitor comprising:
• a lower electrode containing metal;
• a dielectric film containing tantalum oxide or niobium oxide;
• an upper electrode containing metal;
• and
• at least one of a lower barrier layer which is provided between the lower electrode and the dielectric film and an upper barrier layer which is provided between the upper electrode and the dielectric film,
• the lower barrier layer being insulating layer which contains silicon, oxygen and nitrogen, containing the nitrogen at least in a portion on a side contacting the lower electrode and containing the oxygen in a portion on a side contacting the dielectric film,
• the upper barrier layer being insulating layer which contains silicon, oxygen and nitrogen, containing the nitrogen at least in a portion on a side contacting the upper electrode and containing the oxygen in a portion on a side contacting the dielectric film.

A method of manufacturing a semiconductor device comprising:

• preparing a semiconductor substrate;
• and
• forming a capacitor above the semiconductor substrate, the capacitor comprising a lower electrode containing metal, a dielectric film containing tantalum oxide or niobium oxide, an upper electrode containing metal, and at least one of a lower barrier layer and an upper barrier layer,
• forming the capacitor comprising:
• forming a first conductive film containing the metal to be processed into the lower electrode;
• forming the dielectric film contacting the first conductive film directly or via the lower barrier layer;
• and
• forming a second conductive film containing the metal to be processed into the upper electrode, the second conductive film contacting the dielectric film directly or via the upper barrier layer, and
• forming the upper barrier layer comprising:
• forming a first upper insulating layer containing silicon and oxygen on the dielectric film by a reactive sputtering process with a sputtering target containing silicon in an atmosphere containing oxygen;
• and
• forming a second upper insulating layer containing silicon and nitrogen on the dielectric film by a reactive sputtering process with a sputtering target containing silicon in the atmosphere where the oxygen is replaced with nitrogen.