Semiconductor device and method of manufacturing semiconductor device
OwnerMasato Koyama, Akira Nishiyama +4inventors
InventorsMasato Koyama, Akira Nishiyama, Yasushi Nakasaki, Masamichi Suzuki, Yuuichi Kamimuta, Akio Kaneko
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Abstract
A semiconductor device comprises a substrate and a MISFET including source-drain regions formed in the substrate and a gate electrode formed on the substrate with a gate insulating film interposed therebetween. The gate electrode is formed of a metal oxynitride film containing a metal-oxygen-nitrogen bond chain. Alternatively, the gate insulating film is formed of a nitrided metal silicate film containing at least one of a metal-oxygen-nitrogen bond chain and asilicon-oxygen-nitrogen bond chain.
Claims24
A semiconductor device, comprising:
- a substrate;
- and
- a MISFET including source-drain regions formed in the substrate, a gate insulating film formed on the substrate, and a gate electrode formed on the gate insulating film ,the gate insulating film comprising a metal oxynitride film containing a metal-oxygen-nitrogen bond chain.
A semiconductor device, comprising:
- a substrate;
- and
- a MISFET including source-drain regions formed in the substrate, a gate insulating film on the substrate and a gate electrode formed on the gate insulating film, the gate insulating film comprising a nitrided metal silicate film containing one of a metal-oxygen-nitrogen bond chain and a silicon-oxygen nitrogen bond chain.
A method of manufacturing a semiconductor device, comprising:
- forming a metal oxide film on a substrate;
- applying a heat treatment to the metal oxide film under temperature falling within a range of between 700° C. and 900° C.;
- adding nitrogen to the metal oxide film after the heat treatment by using nitrogen under an excited state so as to obtain a gate insulating film consisting of a metal oxynitride film containing a metal-oxygen-nitrogen bond chain;
- and
- forming a gate electrode on the gate insulating film.
A method of manufacturing a semiconductor device, comprising:
- forming a metal silicate film on a substrate;
- applying a heat treatment to the metal silicate film under temperature falling within a range of between 700° C. and 900° C.;
- adding nitrogen to the metal silicate film after the heat treatment by using nitrogen under an excited state so as to obtain a gate insulating film consisting of a nitrided metal silicate film containing at least one of a metal-oxygen-nitrogen bond chain and a silicon-oxygen-nitrogen bond chain;
- and
- forming a gate electrode on the gate insulating film.
A method of manufacturing a semiconductor device, comprising:
- forming by a CVD method on a substrate a gate insulating film consisting of a metal oxynitride film having a metal-oxygen-nitrogen bond chain, the CVD method being carried out in the presence of nitrogen under an excited state;
- and
- forming a gate electrode on the gate insulating film.
A method of manufacturing a semiconductor device, comprising:
- forming by a CVD method on a substrate a gate insulating film consisting of a nitrided metal silicate film having at least one of a metal-oxygen-nitrogen bond chain and a silicon-oxygen-nitrogen bond chain, the CVD method being carried out in the presence of nitrogen under an excited state;
- and
- forming a gate electrode on the gate insulating film.
A semiconductor device, comprising:
- a substrate;
- and
- a MISFET including source-drain regions formed in the substrate, a gate insulating film formed on the substrate, and a gate electrode formed on the gate insulating film , the gate insulating film comprising a metal oxynitride film, the metal oxynitride film consisting of metal, oxygen and nitrogen, and the metal oxynitride film having peaks of binding energy corresponding to a metal-oxygen bond and a oxygen-nitrogen bond.
A semiconductor device, comprising:
- a substrate;
- and
- a MISFET including source-drain regions formed in the substrate, a gate insulating film formed on the substrate, and a gate electrode formed on the gate insulating film, the gate insulating film comprising a nitride metal silicate film, the nitride metal silicate film consisting of metal, oxygen, nitrogen and silicon, and the nitride metal silicate film having peaks of binding energy corresponding to a oxygen-nitride bond and a silicon-nitrogen bond.
Dependencies are inferred from the claim text.