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US 2004/0169229 A1Published application
Semiconductor structure comprising an electrostatic discharge (esd) protection device
AssigneeInfineon Technologies AG
InventorsKlaus Diefenbeck, Klaus Gnannt, Jakob Huber, Ulrich Krumbein
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Abstract
semiconductor structure having an ESD protective means A semiconductor structure including a substrate (102), a device layer (104) and a contact (108) arranged on the substrate (102), comprises an ESD protective means (144a, 144b), arranged between the substrate (102) and the contact (108), such, that in the ESD case a breakthrough from the ESD protective means (144a, 144b) to the contact (108) occurs.
Claims11
Semiconductor structure, comprising a substrate (102);
- a device layer (104) arranged on the substrate (102);
- a contact (108);
- and
- an ESD protective means (144a, 144b) arranged between the substrate (102) and the contact (108), such, that in the ESD case a breakthrough from the ESD protective means (144a, 144b) to the contact (108) occurs.
1 more element
Dependencies are inferred from the claim text.