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US 2004/0169210 A1Published application
Barrier material
AssigneesInfineon Technologies AG, Kabushiki Kaisha Toshiba
InventorsKarl Hornik, Koji Yamakawa, Hiroshi Itokawa
Life of this patent
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Abstract
A barrier layer protecting, for example, a ferroelectric capacitor from hydrogen is described. The barrier layer comprises aluminum oxide with barrier enhancement dopants. The barrier enhancement dopants are selected from Ti, Hf, Zr, their oxides, or a combination thereof.
Claims20
An integrated circuit (IC) comprising:
- a circuit feature;
- and
- a barrier layer covering at least part of the circuit feature, the barrier layer comprising aluminum oxide and barrier enhancing dopants.
Dependencies are inferred from the claim text.