Fabrication of a heterojunction bipolar transistor with integrated MIM capacitor

A method for forming a device, comprising:

• forming a lower plate and an insulator section of a metal-insulator-metal (MIM) capacitor on an upper surface of a heterostructure located on a semi-insulating substrate, the material of the lower plate and underlying heterostructure being common to an electrode and substructure of an emitter section of a heterojunction bipolar transistor (HBT) subsequently defined in the process on another section of the device;
• forming a base electrode of the HBT and an upper plate of the MIM capacitor from a commonly deposited metal layer;
• defining base and collector sections of the HBT in layers of the heterostructure located beneath the emitter section;
• and
• forming a resistor having a contact formed from a commonly deposited metal layer from which a section of at least one of the HBT and the MIM capacitors are formed.