Ashing apparatus, ashing methods, and methods for manufacturing semiconductor devices
OwnerTakumi Shibatainventor
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Abstract
A method for manufacturing a semiconductor device in accordance with an embodiment of the present invention includes a step of forming a TiN film 2 on an underlying film 1; a step of coating a photoresist film on the TiN film 2, and exposing and developing the photoresist film; a step of etching the TiN film 2 using the photoresist film 4a as a mask, by using an etching apparatus that etches an Al alloy film; a step of introducing a mixed gas containing O2 gas and N2 gas adjacent to the photoresist film, and plasmatizing the gas to thereby ash the photoresist film, and a step of introducing H2O gas adjacent to the TiN film, and plasmatizing the gas to thereby ash foreign matter on the TiN film.
Claims17
An ashing method that ashes a photoresist film on a body to be processed in which a TiN film is etched using the photoresist film as a mask, the method comprising:
- disposing a body to be processed in an ashing chamber;
- a first step of introducing a first ashing gas adjacent to the body to be processed, and forming a plasma in the first ashing gas and ashing the photoresist film;
- and
- a second step of introducing H2O gas adjacent to the body to be processed, and forming a plasma in the H2O gas and ashing foreign matter, if present, on the body to be processed.
A method for manufacturing a semiconductor device, the method comprising:
- a first step of forming a TiN film on an underlying film;
- a second step of coating a photoresist film on the TiN film, and exposing and developing the photoresist film;
- a third step of etching the TiN film using the photoresist film as a mask, by using an etching apparatus that etches an Al alloy film;
- a fourth step of introducing a mixed gas containing O2 gas and N2 gas adjacent to the photoresist film, and forming a plasma in the gas and ashing the photoresist film;
- and
- a fifth step of introducing H2O gas adjacent to the TiN film, and forming a plasma in the gas and ashing foreign matter, if present, on the TiN film.
A method for manufacturing a semiconductor device, the method comprising:
- a first step of forming a TiN film on an underlying film;
- a second step of forming a BARC on the TiN film;
- a third step of coating a photoresist film on the BARC, and exposing and developing the photoresist film;
- a fourth step of etching the BARC and the TiN film using the photoresist film as a mask, by using an etching apparatus that etches an Al alloy film;
- a fifth step of introducing a mixed gas containing O2 gas and N2 gas adjacent to the photoresist film, and forming a plasma in the gas and ashing the photoresist film and the BARC;
- and
- a sixth step of introducing H2O gas adjacent to the TiN film, and forming a plasma in the gas and ashing foreign matter, if present, on the TiN film.
An ashing method that ashes a photoresist film on a body to be processed in which a conducting layer has been etched using the photoresist film as a mask, the method comprising:
- introducing a first gas into the chamber, forming a plasma in the first gas and ashing the photoresist film on the body;
- and
- introducing a second gas comprising H2O gas into the chamber, forming a plasma in the second gas and ashing foreign matter, if present, on the body;
- wherein the first gas has a composition different from that of the second gas.
A process for processing a body in which a conducting film has been etched using the photoresist film as a mask, the process comprising:
- providing a body having a photoresist film thereon in a chamber;
- introducing a first ashing gas to the chamber, forming a plasma in the chamber with the first ashing gas therein, and ashing the photoresist film;
- stopping the introducing a first ashing gas to the chamber;
- and
- introducing a second ashing gas comprising H2O into the chamber and forming a plasma in the chamber with the second ashing gas comprising H2O gas therein.
Dependencies are inferred from the claim text.