Atomic layer deposition of oxide film
AssigneeSharp Laboratories of America, Inc.
InventorsJohn F. Conley JR., Yoshi Ono, Rajendra Solanki
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Abstract
An atomic layer deposition method to deposit a oxide thin film is provided. The method employs a nitrate ligand in a first hafnium precursor as an oxidizer for a second hafnium precursor to form the hafnium oxide. Using a hafnium nitrate precursor and a hafnium chloride precursor, the method is well suited for the deposition of a high k hafnium oxide dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.
Claims20
A method for using a hafnium nitrate-containing precursor as an oxidizing agent for a hafnium-containing precursor in an atomic layer deposition process for the formation of a hafnium oxide film, the method comprising the steps of:
- a. introducing a hafnium nitrate-containing precursor;
- b. purging the hafnium nitrate-containing precursor;
- c. introducing a hafnium-containing precursor;
- and
- d. purging the hafnium-containing precursor.
A method for using a hafnium nitrate precursor as an oxidizing agent for a hafnium-containing precursor in an atomic layer deposition process for the formation of a hafnium oxide film on a semiconductor substrate, the method comprising the steps of:
- a. providing a hydrogen-terminated silicon surface on the semiconductor substrate within an atomic layer deposition chamber;
- b. introducing a hafnium nitrate precursor into the chamber;
- c. purging the chamber;
- d. introducing a hafnium-containing precursor into the chamber;
- and
- e. purging the chamber.
Dependencies are inferred from the claim text.