Approximating eigensolutions for use in determining the profile of a structure formed on a semiconductor wafer
AssigneeTokyo Electron Limited
InventorsJoerg Bischoff, Karl Hehl, Xinhui Niu, Wen Jin
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AssigneeTokyo Electron Limited
InventorsJoerg Bischoff, Karl Hehl, Xinhui Niu, Wen Jin
Estimating the term…
Eigensolutions for use in determining the profile of a structure formed on a semiconductor wafer can be approximated by obtaining a known set of eigenvectors associated with a first section of a hypothetical profile of the structure, where the known set of eigenvectors is used to generate a simulated diffraction signal for the hypothetical profile. A known characteristic matrix associated with a second section of a hypothetical profile is obtained, and an approximated set of eigenvalues for the second section is determined based on the known set of eigenvectors associated with the first section and the known characteristic matrix associated with the second section.
A method of approximating eigensolutions for use in determining the profile of a structure formed on a semiconductor wafer, the method comprising:
A method of approximating eigensolutions for use in determining the profile of a structure formed on a substrate, the method comprising:
A system to approximate eigensolutions for use in determining the profile of a structure formed on a semiconductor wafer, the system comprising:
A computer-readable storage medium containing computer executable instructions for causing a computer to approximate eigensolutions for use in determining the profile of a structure formed on a semiconductor wafer, comprising instructions for:
Dependencies are inferred from the claim text.