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US 2004/0166692 A1Published application
Method for producing hydrogenated silicon oxycarbide films
OwnerMark Jon Loboda, Byung Keun Hwanginventors
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Abstract
A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.
Claims23
A chemical vapor deposition method for producing hydrogenated silicon oxycarbide films comprising
- introducing a reactive gas mixture comprising (i) a cyclic silane compound containing at least one strained silicon bond and (ii) an oxygen providing gas into a deposition chamber containing a substrate and inducing a reaction between the cyclic silane compound and oxygen providing gas at a temperature of 25° C. to 500° C.;
- wherein there is a controlled amount of oxygen present during the reaction to provide a film on the substrate comprising hydrogen, silicon, carbon and oxygen having a dielectric constant in the range of 2.0 to 3.2.
Dependencies are inferred from the claim text.